Electrical Characteristics
T A = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max Units
Off Characteristics
BV DSS
? BV DSS
? T J
I DSS
I GSSF
I GSSR
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
V GS = 0 V, I D = -250 μ A
I D = -250 μ A, Referenced to 25 ° C
V DS = -24 V, V GS = 0 V
V GS = 20 V, V DS = 0 V
V GS = -20 V, V DS = 0 V
-30
-20
-1
100
-100
V
mV/ ° C
μ A
nA
nA
On Characteristics
(Note 2)
V GS(th)
? V GS(th)
? T J
R DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V DS = V GS , I D = -250 μ A
I D = -250 μ A, Referenced to 25 ° C
V GS = -10 V, I D = -1.8 A
V GS = -10 V, I D = -1.8 A @125 ° C
-1
-1.8
4
0.14
0.20
-3
0.17
0.27
V
mV/ ° C
?
V GS = -4.5 V, I D = -1.4 A
0.22
0.28
I D(on)
g FS
On-State Drain Current
Forward Transconductance
V GS = -10 V, V DS = - 5 V
V DS = -5 V, I D = -1.8 A
-10
3
A
S
Dynamic Characteristics
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V DS = -15 V, V GS = 0 V,
f = 1.0 MHz
190
70
30
pF
pF
pF
Switching Characteristics
(Note 2)
t d(on)
t r
t d(off)
t f
Q g
Q gs
Q gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V DD = -15 V, I D = -1 A,
V GS = -4.5 V, R GEN = 6 ?
V DS = -5 V, I D = -1.8 A,
V GS = -10 V
7
8
14
2
2.3
1
0.8
14
16
25
6
3.5
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
I S
Maximum Continuous Drain-Source Diode Forward Current
-0.8
A
V SD
Drain-Source Diode Forward Voltage
V GS = 0 V, I S = -0.8 A
(Note 2)
-0.8
-1.2
V
Notes:
1. R θ JA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface
of the drain pins. R θ JC is guaranteed by design while R θ JA is determined by the user's board design.Both devices are assumed to be operating and
sharing the dissipated heat energy equally.
a) 130 ° C/W when
mounted on a 0.125 in 2
pad of 2 oz. copper.
b) 140 ° C/W when
mounted on a 0.005 in 2
pad of 2 oz. copper.
c) 180 ° C/W when
mounted on a 0.0015 in 2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 μ s, Duty Cycle ≤ 2.0%
FDC6506P Rev. C
相关PDF资料
FDC653N MOSFET N-CH 30V 5A SSOT-6
FDC654P MOSFET P-CH 30V 3.6A SSOT-6
FDC655BN MOSFET N-CH 30V 6.3A SSOT-6
FDC6561AN MOSFET N-CHAN DUAL 30V SSOT6
FDC658AP MOSFET P-CH SGL LL 30V 4A SSOT6
FDC658P MOSFET P-CH 30V 4A SSOT-6
FDC855N MOSFET N-CH 30V 6.1A 6-SSOT
FDC8601 MOSFET N-CH 100V TRENCH SSOT-6
相关代理商/技术参数
FDC6506P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL PP SUPERSOT-6
FDC6506P_Q 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC653 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
FDC653N 功能描述:MOSFET SSOT-6 N-CH 30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC653N_F095 功能描述:MOSFET 30V 5A N-CH ENHANCEMENT MODE RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC653N-CUT TAPE 制造商:FAIRCHILD 功能描述:FDC653N 30 V 0.035 Ohm N-Ch Enhancement Mode Field Effect Transistor - SSOT-6
FDC654P 功能描述:MOSFET SSOT-6 P-CH -30V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
FDC654P 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET